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STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 29 A MDmeshTM II Power MOSFET , TO-220, TO-247, TO-220FP Preliminary data Features RDS(on) Type VDSS ID PTOT max. 3 3 STF34NM60N 600 V 0.105 29 A 40 W 1 2 1 2 STP34NM60N 600 V 0.105 29 A 210 W TO-247 TO-220 STW34NM60N 600 V 0.105 29 A 210 W 100% avalanche tested 3 Low input capacitance and gate charge 2 1 Low gate input resistance TO-220FP Application Switching applications Description Figure 1. Internal schematic diagram These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STF34NM60N TO-220FP STP34NM60N 34NM60N TO-220 Tube STW34NM60N TO-247 September 2010 Doc ID 17740 Rev 2